Layer-thickness dependence of the compositions in strained III–V superlattices by atom probe tomography

•Lower Al incorporation in InAlAs and InGaAs was found in thin (

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Bibliographic Details
Published in:Journal of crystal growth 2020-04, Vol.535, p.125550, Article 125550
Main Authors: Knipfer, B., Rajeev, A., Isheim, D., Kirch, J.D., Babcock, S.E., Kuech, T.F., Earles, T., Botez, D., Mawst, L.J.
Format: Article
Language:English
Subjects:
A1. Atom probe tomography
A3. Organometallic vapor phase epitaxy
A3. Superlattice
B3. Quantum cascade lasers
Barrier layers
Composition
Conduction bands
Emissions control
Epitaxial growth
Image reconstruction
Indium phosphides
Metalorganic chemical vapor deposition
Quantum cascade lasers
Scanning transmission electron microscopy
Substrates
Superlattices
Thickness
Thin films
Tomography
Vapor phase epitaxy
Vapor phases
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Description
Summary:•Lower Al incorporation in InAlAs and InGaAs was found in thin (
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2020.125550