Laser-Assisted Multilevel Non-Volatile Memory Device Based on 2D van-der-Waals Few-layer-ReS2/h-BN/Graphene Heterostructures

Few-layer ReS2 field-effect transistors (FET) with a local floating gate (FG) of monolayer graphene separated by a thin h-BN tunnel layer for application to a non-volatile memory (NVM) device is designed and investigated. FG-NVM devices based on two-dimensional (2D) van-der-Waals (vdW) heterostructu...

Full description

Saved in:
Bibliographic Details
Published in:arXiv.org 2020-09
Main Authors: Mukherjee, Bablu, Zulkefli, Amir, Watanabe, Kenji, Taniguchi, Takashi, Wakayama, Yutaka, Nakaharai, Shu
Format: Article
Language:English
Subjects:
Data processing
Digital electronics
Electromagnetic absorption
Electronic devices
Field effect transistors
Graphene
Heterostructures
Lasers
Memory devices
Multilayers
Optoelectronics
Quantum phenomena
Semiconductor devices
Signal processing
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Few-layer ReS2 field-effect transistors (FET) with a local floating gate (FG) of monolayer graphene separated by a thin h-BN tunnel layer for application to a non-volatile memory (NVM) device is designed and investigated. FG-NVM devices based on two-dimensional (2D) van-der-Waals (vdW) heterostructures have recently been studied as important components to realize digital electronics and multifunctional memory applications. Direct bandgap multilayer ReS2 satisfies various requirements as a channel material for electronic devices as well as being a strong light-absorbing layer, which makes it possible to realize light-assisted optoelectronic applications. The non-volatile memory operation with a high ON/OFF current ratio, a large memory window, good endurance (> 1000 cycles) and stable retention (> 104 s) have been observed. We demonstrate successive program and erase states using 10 millisecond gate pulses of +10 V and -10 V, respectively. Laser pulses along with electrostatic gate pulses provide multi-bit level memory access via opto-electrostatic coupling. The devices exhibit the dual functionality of a conventional electronic memory and can store laser-pulse excited signal information for future all-optical logic and quantum information processing.
ISSN:2331-8422
DOI:10.48550/arxiv.2009.00190