Unusual temperature evolution of the band structure of Bi(111) studied by angle-resolved photoemission spectroscopy and density functional theory

We have performed angle-resolved photoemission spectroscopy of Bi(111) thin films grown on Si(111), and investigated the evolution of band structure with temperature. We revealed an unexpectedly large temperature variation of the energy dispersion for the Rashba-split surface state and the quantum-w...

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Bibliographic Details
Published in:Physical review. B 2020-08, Vol.102 (8), p.1, Article 085112
Main Authors: Sato, Takafumi, Yamada, Keiko, Kosaka, Takao, Souma, Seigo, Yamauchi, Kunihiko, Sugawara, Katsuaki, Oguchi, Tamio, Takahashi, Takashi
Format: Article
Language:English
Subjects:
Band structure of solids
Bilayers
Density functional theory
Dispersion
Electron states
Evolution
First principles
Interlayers
Photoelectric emission
Photoelectron spectroscopy
Quantum wells
Silicon substrates
Spectrum analysis
Temperature dependence
Thin films
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Summary:We have performed angle-resolved photoemission spectroscopy of Bi(111) thin films grown on Si(111), and investigated the evolution of band structure with temperature. We revealed an unexpectedly large temperature variation of the energy dispersion for the Rashba-split surface state and the quantum-well states, as seen in the highly momentum-dependent energy shift as large as 0.1 eV. A comparison of the band dispersion between experiment and first-principles band-structure calculations suggests that the interlayer spacing at the topmost Bi bilayer expands upon temperature increase. The present study provides a pathway for investigating the interplay between lattice and electronic states through the temperature dependence of band structure.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.102.085112