Optimal Cooling System Design for Increasing the Crystal Growth Rate of Single-Crystal Silicon Ingots in the Czochralski Process Using the Crystal Growth Simulation

Here, we report a successfully modified Czochralski process system by introducing the cooling system and subsequent examination of the results using crystal growth simulation analysis. Two types of cooling system models have been designed, i.e., long type and double type cooling design (LTCD and DTC...

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Bibliographic Details
Published in:Processes 2020-09, Vol.8 (9), p.1077
Main Authors: Jeon, Hye Jun, Park, Hyeonwook, Koyyada, Ganesh, Alhammadi, Salh, Jung, Jae Hak
Format: Article
Language:English
Subjects:
Computer simulation
Cooling rate
Cooling systems
Crystal growth
Crystal pulling
Crystallization
Czochralski method
Defects
Fluids
Growth rate
Heat conductivity
Heat transfer
Ingots
Interfaces
Quality
Reynolds number
Silicon
Simulation
Single crystals
Software
Symmetry
Systems design
Temperature gradients
Thermal stress
Velocity
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Summary:Here, we report a successfully modified Czochralski process system by introducing the cooling system and subsequent examination of the results using crystal growth simulation analysis. Two types of cooling system models have been designed, i.e., long type and double type cooling design (LTCD and DTCD) and their production quality of monocrystalline silicon ingot was compared with that of the basic type cooling design (BTCD) system. The designed cooling system improved the uniformity of the temperature gradient in the crystal and resulted in the significant decrease of the thermal stress. Moreover, the silicon monocrystalline ingot growth rate has been enhanced to 18% by using BTCD system. The detailed simulation results have been discussed in the manuscript. The present research demonstrates that the proposed cooling system would stand as a promising technique to be applied in CZ-Si crystal growth with a large size/high pulling rate.
ISSN:2227-9717
2227-9717
DOI:10.3390/pr8091077