High‐Performance Broadband Tungsten Disulfide Photodetector Decorated with Indium Arsenide Nanoislands

The 2D tungsten disulfide (WS2), as a typical transition metal dichalcogenide (TMD), has aroused intense research interests in photodetection. However, the limited detection wavelength ranges and low photoresponsivity hinder its further application. To promote the application of WS2 in optoelectroni...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2020-09, Vol.217 (17), p.n/a
Main Authors: Yang, Yuekun, Liu, Guanyu, Li, Panlin, Zhang, Miao, Wang, Jianlu, Hu, Weida, Xue, Zhongying, Di, Zengfeng
Format: Article
Language:English
Subjects:
Ambient temperature
Broadband
Electromagnetic absorption
Heterostructures
indium arsenide
Indium arsenides
Intermetallic compounds
molecular beam epitaxy
nanoislands
Optoelectronic devices
photodetectors
Photoelectric effect
Photoelectric emission
Photometers
Transition metal compounds
Tungsten disulfide
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Summary:The 2D tungsten disulfide (WS2), as a typical transition metal dichalcogenide (TMD), has aroused intense research interests in photodetection. However, the limited detection wavelength ranges and low photoresponsivity hinder its further application. To promote the application of WS2 in optoelectronics fields, indium arsenide (InAs) nanoislands decorated WS2 are utilized to fabricate photodetectors in this work. Owing to the photogating effect and localized surface plasmon resonance (LSPR), a significant enhancement of photocurrent response (≈1 mA W−1) is obtained by coupling WS2 with InAs nanoislands. Furthermore, the extended detection wavelength up to 1060 nm is realized due to the efficient light absorption in IR range of InAs nanoislands. The high performance, stability, and reliability in ambient temperature strongly indicate that the InAs nanoislands/WS2 heterostructure can be considered as a promising material for TMDs‐based broadband optoelectronic devices in the future. High‐performance indium arsenide (InAs) nanoislands/tungsten disulfide (WS2) heterostructure photodetectors are fabricated and their photocurrent response behaviors are investigated systematically. By coupling WS2 with InAs nanoislands, significant enhancement of photocurrent response as well as the extended detection wavelength up to 1060 nm are realized in ambient temperature.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.202000297