Artificial synaptic transistors based on Schottky barrier height modulation using reduced graphene oxides

Development of artificial synapses is essential for highly-efficient brain-inspired neuromorphic computing. To achieve the high-performance artificial synapses, gradual change in synaptic weight with linear and symmetric forms is required. Here, we propose artificial synapses, in which synaptic weig...

Full description

Saved in:
Bibliographic Details
Published in:Carbon (New York) 2020-09, Vol.165, p.455-460
Main Authors: Park, Youngjun, Kim, Min-Kyu, Lee, Jang-Sik
Format: Article
Language:English
Subjects:
Artificial synapses
Computation
Electrolytes
Graphene
Modulation
Reduced graphene oxides
Schottky barrier height modulation
Semiconductors
Symmetry
Synapses
Synaptic transistors
Three-terminal devices
Transistors
Weight
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Development of artificial synapses is essential for highly-efficient brain-inspired neuromorphic computing. To achieve the high-performance artificial synapses, gradual change in synaptic weight with linear and symmetric forms is required. Here, we propose artificial synapses, in which synaptic weight is changed gradually by use of gate bias to modulate the Schottky barrier height between reduced graphene oxide and oxide semiconductor. This approach enables linear and symmetric change in synaptic weight. Also, an ion gel is used as the gate electrolyte, which can reduce the gate voltage required for modulation of Schottky barrier height. The fabricated artificial synapses show essential synaptic functions such as excitatory postsynaptic current, paired-pulse facilitation, and potentiation/depression. These results demonstrate that the devices that exploit modulation of Schottky barrier height can be applied to artificial synapses in advanced neuromorphic computing. [Display omitted]
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2020.04.096