Investigation into Microwave Absorption in Semiconductors for Frequency-Multiplication Devices and Radiation-Output Control of Continuous and Pulsed Gyrotrons

• Published in: Semiconductors (Woodbury, N.Y.) N.Y.), 2020-09, Vol.54 (9), p.1069-1074
• Main Authors: Maremyanin, K. V., Parshin, V. V., Serov, E. A., Rumyantsev, V. V., Kudryavtsev, K. E., Dubinov, A. A., Fokin, A. P., Morosov, S. S., Aleshkin, V. Ya, Glyavin, M. Yu, Denisov, G. G., Morozov, S. V.
• Format: Article
• Language: English
• Subjects: 2020; Carrier density; Crystal lattices; Cyclotron resonance devices; Dielectric loss; Electric properties; Emissions control; Fabry-Perot interferometers; Frequency ranges; Gallium arsenide; Indium phosphides; Investigations; Magnetic Materials; Magnetism; March 10–13; Microwave absorption; Multiplication; Nizhny Novgorod; Optimization; Physics; Physics and Astronomy; Plasma physics; Radiation; Semiconductor crystals; Semiconductor devices; Silicon; Single crystals; Substrates; Xxiv International Symposium “Nanophysics and Nanoelectronics”
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782620090195

The results of experimental investigation into the dielectric losses in GaAs, InP:Fe, and Si semiconductor crystals in the millimeter wavelength range (80–260 GHz) using the original precise method of measuring the reflectance and dielectric-loss tangent tanδ based on open high-quality Fabry–Perot cavities are presented. It is shown that the losses in the frequency range from 100 to 260 GHz in ultrapure semiconductor single-crystal GaAs substrates are mainly determined by lattice absorption, while the main loss mechanism in single-crystal silicon is absorption by free carriers; herewith, tan δ ≈ (1–2) × 10 –4 even for a noticeable, at a level of 10 12 cm –3 , free carrier concentration. In contrast with GaAs and Si, tanδ in compensated InP:Fe crystals is almost independent of frequency in the range from 100 to 260 GHz, which is associated with the material conductivity and optimization of microwave semiconductor devices, in particular, frequency-multiplication devices and devices of the controlled emission output of continuous and pulsed gyrotrons.