Synthesis of Morphologically Developed InGaN Nanostructures on Silicon: Influence of the Substrate Temperature on the Morphological and Optical Properties

The study concerns the issue of how the morphological characteristics and optical properties of morphologically branched InGaN nanostructures grown on the Si(111) surface by molecular-beam epitaxy depend on the substrate temperature. It is shown that, as the substrate temperature is elevated, the he...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2020-09, Vol.54 (9), p.1075-1077
Main Authors: Reznik, R. R., Gridchin, V. O., Kotlyar, K. P., Kryzhanovskaya, N. V., Morozov, S. V., Cirlin, G. E.
Format: Article
Language:English
Subjects:
2020
Epitaxial growth
Epitaxy
Indium gallium nitrides
Light emitting diodes
Magnetic Materials
Magnetism
March 10–13
Molecular beam epitaxy
Morphology
Nanostructure
Nizhny Novgorod
Optical properties
Photoluminescence
Physics
Physics and Astronomy
Silicon
Silicon substrates
White light
Xxiv International Symposium “Nanophysics and Nanoelectronics”
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Summary:The study concerns the issue of how the morphological characteristics and optical properties of morphologically branched InGaN nanostructures grown on the Si(111) surface by molecular-beam epitaxy depend on the substrate temperature. It is shown that, as the substrate temperature is elevated, the height of InGaN nanocolumns formed at the initial stage of growth increases. In addition, an increase in the growth temperature of InGaN nanostructures yields an increase in the intensity of the photoluminescence spectra of such structures, and the dependences of the integrated photoluminescence intensity on the excitation power density are linear. These facts suggest that the structures offer promise for optical applications, specifically, for the creation of white light-emitting diodes on the basis of a unified material.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782620090237