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All-inkjet-printed MoS2 field-effect transistors on paper for low-cost and flexible electronics

All-inkjet-printing of transistors has received much attention for low cost and flexible integrated circuits. However, most flexible field-effect transistors (FETs) based on the emerging two-dimensional materials suffer from the high cost of substrate and electrode materials. The requirements for hi...

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Bibliographic Details
Published in:Applied nanoscience 2020-09, Vol.10 (9), p.3649-3658
Main Authors: Jiang, Zhi, Chen, Long, Chen, Jin- Ju, Wang, Yan, Xu, Zhao- quan, Sowade, Enrico, Baumann, Reinhard R., Sheremet, Evgeniya, Rodriguez, Raul D., Feng, Zhe- sheng
Format: Article
Language:English
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Summary:All-inkjet-printing of transistors has received much attention for low cost and flexible integrated circuits. However, most flexible field-effect transistors (FETs) based on the emerging two-dimensional materials suffer from the high cost of substrate and electrode materials. The requirements for high-temperature synthesis and precise control in processing add another layer of complexity. To overcome these issues, low-cost flexible paper-based MoS 2 FETs were fabricated by inkjet printing of MoS 2 channel materials on paper. Additionally, we proposed and achieved the mask-less and low-temperature formation of source and drain electrodes on paper using in-situ selective-area copper reduction. A low sub-threshold swing of 80 mV/dec, high on/off ratio of 10 5 , and very high turn-on current ( I on ) of 200 μA of the paper-based flexible MoS 2 FETs were demonstrated using the proposed low-cost and facile all-inkjet-printing technique. The all-inkjet-printing technique assisted by in-situ copper reduction opens new opportunities for low-cost and batch fabrication of paper-based electronic devices in ambient conditions.
ISSN:2190-5509
2190-5517
DOI:10.1007/s13204-020-01438-3