Very low-temperature growth of few-layer graphene by Ni-induced crystallization of amorphous carbon in vacuum

• Published in: Carbon (New York) 2020-04, Vol.159, p.37-44
• Main Authors: Chen, Yuanyuan, Wang, Jiangyong, Schützendübe, Peter, Wang, Zumin, Mittemeijer, Eric J.
• Format: Article
• Language: English
• Subjects: Bilayers; Carbon; Combinatorial analysis; Crystallization; Diffusion layers; Diffusion rate; Electron microscopy; Energy storage; Graphene; High vacuum; Low temperature; Photoelectrons; Scanning electron microscopy; Surface diffusion; Temperature effects; Thickness; X ray photoelectron spectroscopy
• ISSN: 0008-6223; 1873-3891
• DOI: 10.1016/j.carbon.2019.12.017

Graphene of thickness a few atomic layers has been grown in Ni/a-C bilayers at temperatures as low as 300 °C by Ni-induced crystallization of the amorphous carbon (a-C) in high vacuum. The mechanism of such very low-temperature growth of graphene has been investigated by a combinatorial experimental approach including x-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, x-ray photoelectron spectroscopy and transmission electron microscopy. The growth of this few atomic layer thickness graphene has been found to be mediated by a coupled grain-boundary (GB) diffusion/surface diffusion mechanism. GBs in the top Ni sublayer provide fast diffusion paths for C atoms through the Ni layer, as a result of which graphene layers form above the Ni. The revealed low-temperature growth mechanism of graphene induced by contact with a metal can be applicable in advancing research fields as metal-matrix graphene composites and advanced energy storage devices. [Display omitted]