Silicon-vacancy color centers in phosphorus-doped diamond

• Published in: Diamond and related materials 2020-05, Vol.105, p.107797, Article 107797
• Main Authors: Flatae, Assegid Mengistu, Lagomarsino, Stefano, Sledz, Florian, Soltani, Navid, Nicley, Shannon S., Haenen, Ken, Rechenberg, Robert, Becker, Michael F., Sciortino, Silvio, Gelli, Nicla, Giuntini, Lorenzo, Taccetti, Francesco, Agio, Mario
• Format: Article
• Language: English
• Subjects: Color centers; Diamonds; Emission analysis; Emitters; Fluorescence; Ion implantation; Phosphorus; Photon emission; Photons; Silicon; Vacancies
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/j.diamond.2020.107797

The controlled creation of color centers in phosphorus-doped (n-type) diamond can facilitate the electronics integration of quantum photonics devices, such as single-photon sources operating upon electrical injection. Silicon vacancy (SiV) color centers are promising candidates, but so far the conditions for single-photon emission in phosphorus-doped diamond have not been investigated. In this study, we create SiV color centers in diamond samples with different phosphorus concentrations and show that the fluorescence background due to doping, nitrogen-impurities and ion implantation induced defects can be significantly suppressed. Single-photon emitters in phosphorus-doped diamond are obtained at low Si-ion implantation fluences. [Display omitted] •Single SiV color centers in n-type diamond samples show high spectral quality.•SiV color centers in n-type diamond facilitate the electrical excitation of diamond-based single-photon sources.•Single SiV color centers are obtained at the low Si-ion implantation fluences.