Modulation on the electronic properties and band gap of layered ReSe2 via strain engineering

• Published in: Journal of alloys and compounds 2020-06, Vol.827, p.154364, Article 154364
• Main Authors: Liu, Yiming, Li, Xing, Guo, Yao, Yang, Tao, Chen, Kaijian, Lin, Chaonan, Wei, Jianyong, Liu, Qian, Lu, Yingjie, Dong, Lin, Shan, Chongxin
• Format: Article
• Language: English
• Subjects: Anisotropy; Band gap modulation; Compressive properties; Electrical properties; Electronic devices; Electronic properties; Energy gap; Flexible electronics; Modulation; Optical properties; Photoluminescence; Piezoresistive effect; ReSe2; Two dimensional materials
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2020.154364

Two-dimensional (2D) materials have drawn tremendous attention due to their planar nature, good mechanical, optical and electrical properties especially for flexible electronic devices whose performance could be modulated by external mechanical strains. Here, the piezoresistive property of layered ReSe2 upon various homogeneous strains is investigated. Highly sensitive and reliable response in resistance has been observed for ReSe2-based flexible devices under tensile/compressive strains. Photoluminescence spectra measurement further confirmed the strain modulation on the band gap energy, leading to the piezoresistive property in ReSe2. Additionally, it is found that the electromechanical behavior of ReSe2 can be greatly influenced by the directions of applied strains, where the gauge factor is 4.29 times higher when the strain is applied along the b-axis than that obtained under strain perpendicular to b-axis. The strain-direction-sensitive electromechanical behavior can be attributed to the different band gap change induced by strains along various directions. These results can contribute to the design, performance improvement and application development of flexible electronic devices based on anisotropic 2D materials. •ReSe2-based flexible devices were fabricated on PEN substrate for electromechanical measurement.•Piezoresistive property in ReSe2-based flexible devices showed high sensitivity, repeatability and long-term stability.•Strain-dependent photoluminescence spectra further revealed that the band gap energy change with strain was −16.65 meV/%.•The piezoresistive property of ReSe2 was observed to be strain-direction sensitive.