9‐3: Advanced Process and Structure of Backplane for Micro LED Display

Five process improvements for protecting the Micro LED display from HTHHO were evaluated by measuring the Vth shift of top‐gate IGZO TFT backplane. The results showed that the Vth value of Micro LED backplane was placed at HTHHO (60 °C, 90% RH) for 1000h drifted less than 1.5V after protected by the...

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Published in:SID International Symposium Digest of technical papers 2020-08, Vol.51 (1), p.104-106
Main Authors: Xie, Hua-fei, Mei, Xue-ru, Lu, Ma-cai, Liu, Ming-gang, Liu, Nian, Wen, Lei, Wu, Si-jia, Fan, Yong, Chen, Shu-jhih, Lee, Chia-yu, Zhang, Sheng-dong, Zhang, Xin
Format: Article
Language:English
Subjects:
Active Matrix
Backplanes
High Temp High Humidity Operation
Indium gallium zinc oxide
Light emitting diodes
Micro LED
Vth shift
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Mei, Xue-ru
Lu, Ma-cai
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description Five process improvements for protecting the Micro LED display from HTHHO were evaluated by measuring the Vth shift of top‐gate IGZO TFT backplane. The results showed that the Vth value of Micro LED backplane was placed at HTHHO (60 °C, 90% RH) for 1000h drifted less than 1.5V after protected by the inorganic/ organic film of TF‐1/TF‐2.
doi_str_mv 10.1002/sdtp.13815
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subjects Active Matrix
Backplanes
High Temp High Humidity Operation
Indium gallium zinc oxide
Light emitting diodes
Micro LED
Vth shift
title 9‐3: Advanced Process and Structure of Backplane for Micro LED Display
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