69‐1: Invited Paper: Trap‐dependent Electrical Characteristics of Organic Semiconductor Devices

Trap states strongly affect the electrical characteristics of organic semiconductor devices. Here, we report how the spatial distribution of the traps affects the current density‐voltage (J‐V) characteristics of single‐charge carrier devices. We found that when the traps are located near a charge‐in...

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Published in:SID International Symposium Digest of technical papers 2020-08, Vol.51 (1), p.2121-2124
Main Authors: Ko, Donghyun, Lee, Jaesang
Format: Article
Language:English
Subjects:
Current carriers
Electric fields
Electric potential
Energy levels
Gaussian distribution
hole-only device
Normal distribution
operating voltage
organic light emitting diodes
Semiconductor devices
space charge limited current
Spatial distribution
traps
Voltage
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description Trap states strongly affect the electrical characteristics of organic semiconductor devices. Here, we report how the spatial distribution of the traps affects the current density‐voltage (J‐V) characteristics of single‐charge carrier devices. We found that when the traps are located near a charge‐injecting electrode, the electric field and thus the operating voltage of a device increase, leading to an increased device resistivity. We analyzed the J‐V characteristics vs. position of the traps by assuming that the devices are space‐charge‐limited and the energy levels of the traps follow a Gaussian distribution.
doi_str_mv 10.1002/sdtp.14047
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source Wiley-Blackwell Read & Publish Collection
subjects Current carriers
Electric fields
Electric potential
Energy levels
Gaussian distribution
hole-only device
Normal distribution
operating voltage
organic light emitting diodes
Semiconductor devices
space charge limited current
Spatial distribution
traps
Voltage
title 69‐1: Invited Paper: Trap‐dependent Electrical Characteristics of Organic Semiconductor Devices
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