21‐3: Invited Paper: High Quality 8K4K Displays driven by Oxide Semiconductor Thin Film Transistor in the Generation 11 Equipment

We have been developing amorphous‐InGaZnO (a‐IGZO) thin film transistors (TFTs) in generation 11 equipment, which has the cost advantage for future premium displays compared to generation 8.5. One Gate One Data (1G1D) 8K4K 85 inch GOA LCD TV has been developed using 4 mask back channel etched (BCE)...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2020-08, Vol.51 (1), p.301-304
Main Authors: Seo, Hyun-Sik, Cao, Weiran, Xiao, Jun Cheng, Wu, Yuan-Chun, Zhao, Bin, ZHANG, Xin, Yan, Xiaolin
Format: Article
Language:English
Subjects:
8K4K
AMLCD
AMOLED
BCE 4 Mask
Circuits
Contact holes
Displays
Equipment costs
Indium gallium zinc oxide
Inkjet printing
Oxide-Semiconductor TFTs
Self-Aligned Coplanar
Semiconductor devices
Thin film transistors
Thin films
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Summary:We have been developing amorphous‐InGaZnO (a‐IGZO) thin film transistors (TFTs) in generation 11 equipment, which has the cost advantage for future premium displays compared to generation 8.5. One Gate One Data (1G1D) 8K4K 85 inch GOA LCD TV has been developed using 4 mask back channel etched (BCE) structure. A 32 inch UD ink jet printing (IJP) OLED TV, oriented to 65 inch 8K4K TVs, driven by self‐aligned coplanar structure TFTs has been demonstrated adopting TFTs with transparent storage and 3.8um contact hole design. InGaSnO (IGTO) TFTs with the mobility of ~ 30 cm2V‐1s‐1 have been deveoped for future applications such as narrow bezel OLEDs and self‐luminous mini‐LEDs/micro LEDs with internal compensation circuit.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.13863