Loading…
21‐3: Invited Paper: High Quality 8K4K Displays driven by Oxide Semiconductor Thin Film Transistor in the Generation 11 Equipment
We have been developing amorphous‐InGaZnO (a‐IGZO) thin film transistors (TFTs) in generation 11 equipment, which has the cost advantage for future premium displays compared to generation 8.5. One Gate One Data (1G1D) 8K4K 85 inch GOA LCD TV has been developed using 4 mask back channel etched (BCE)...
Saved in:
Published in: | SID International Symposium Digest of technical papers 2020-08, Vol.51 (1), p.301-304 |
---|---|
Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | cdi_FETCH-LOGICAL-c1463-da3dc71d8c2cbae2c911e08b9ffb6fb755047487f2dc68e187587eb2e257e2133 |
---|---|
cites | cdi_FETCH-LOGICAL-c1463-da3dc71d8c2cbae2c911e08b9ffb6fb755047487f2dc68e187587eb2e257e2133 |
container_end_page | 304 |
container_issue | 1 |
container_start_page | 301 |
container_title | SID International Symposium Digest of technical papers |
container_volume | 51 |
creator | Seo, Hyun-Sik Cao, Weiran Xiao, Jun Cheng Wu, Yuan-Chun Zhao, Bin ZHANG, Xin Yan, Xiaolin |
description | We have been developing amorphous‐InGaZnO (a‐IGZO) thin film transistors (TFTs) in generation 11 equipment, which has the cost advantage for future premium displays compared to generation 8.5. One Gate One Data (1G1D) 8K4K 85 inch GOA LCD TV has been developed using 4 mask back channel etched (BCE) structure. A 32 inch UD ink jet printing (IJP) OLED TV, oriented to 65 inch 8K4K TVs, driven by self‐aligned coplanar structure TFTs has been demonstrated adopting TFTs with transparent storage and 3.8um contact hole design. InGaSnO (IGTO) TFTs with the mobility of ~ 30 cm2V‐1s‐1 have been deveoped for future applications such as narrow bezel OLEDs and self‐luminous mini‐LEDs/micro LEDs with internal compensation circuit. |
doi_str_mv | 10.1002/sdtp.13863 |
format | article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2445938587</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2445938587</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1463-da3dc71d8c2cbae2c911e08b9ffb6fb755047487f2dc68e187587eb2e257e2133</originalsourceid><addsrcrecordid>eNp9kMtKxDAUhoMoOF42PkHAnVDNpZd0djLOqCg4YgV3JU1OnUgnrUk72p3gC_iMPokdx7WrAz_f_x_4EDqi5JQSws68bptTykXMt9CI0VgEhEbpNhoRkiZBGsdPu2jP-xdCOA_DdIQ-Gf3--OJjfG1XpgWN57IBN8ZX5nmB7ztZmbbH4ia8wRfGN5XsPdbOrMDiosd370YDfoClUbXVnWprh7OFsXhmqiXOnLTe-HU4RO0C8CVYcLI1tcWU4ulrZ5ol2PYA7ZSy8nD4d_fR42yaTa6C27vL68n5baBoGPNAS65VQrVQTBUSmEopBSKKtCyLuCySKCJhEoqkZFrFAqhIIpFAwYBFCTDK-T463uw2rn7twLf5S905O7zMWRhGKRdDYaBONpRytfcOyrxxZildn1OSryXna8n5r-QBphv4zVTQ_0PmDxfZfNP5AcemgBM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2445938587</pqid></control><display><type>article</type><title>21‐3: Invited Paper: High Quality 8K4K Displays driven by Oxide Semiconductor Thin Film Transistor in the Generation 11 Equipment</title><source>Wiley-Blackwell Read & Publish Collection</source><creator>Seo, Hyun-Sik ; Cao, Weiran ; Xiao, Jun Cheng ; Wu, Yuan-Chun ; Zhao, Bin ; ZHANG, Xin ; Yan, Xiaolin</creator><creatorcontrib>Seo, Hyun-Sik ; Cao, Weiran ; Xiao, Jun Cheng ; Wu, Yuan-Chun ; Zhao, Bin ; ZHANG, Xin ; Yan, Xiaolin</creatorcontrib><description>We have been developing amorphous‐InGaZnO (a‐IGZO) thin film transistors (TFTs) in generation 11 equipment, which has the cost advantage for future premium displays compared to generation 8.5. One Gate One Data (1G1D) 8K4K 85 inch GOA LCD TV has been developed using 4 mask back channel etched (BCE) structure. A 32 inch UD ink jet printing (IJP) OLED TV, oriented to 65 inch 8K4K TVs, driven by self‐aligned coplanar structure TFTs has been demonstrated adopting TFTs with transparent storage and 3.8um contact hole design. InGaSnO (IGTO) TFTs with the mobility of ~ 30 cm2V‐1s‐1 have been deveoped for future applications such as narrow bezel OLEDs and self‐luminous mini‐LEDs/micro LEDs with internal compensation circuit.</description><identifier>ISSN: 0097-966X</identifier><identifier>EISSN: 2168-0159</identifier><identifier>DOI: 10.1002/sdtp.13863</identifier><language>eng</language><publisher>Campbell: Wiley Subscription Services, Inc</publisher><subject>8K4K ; AMLCD ; AMOLED ; BCE 4 Mask ; Circuits ; Contact holes ; Displays ; Equipment costs ; Indium gallium zinc oxide ; Inkjet printing ; Oxide-Semiconductor TFTs ; Self-Aligned Coplanar ; Semiconductor devices ; Thin film transistors ; Thin films</subject><ispartof>SID International Symposium Digest of technical papers, 2020-08, Vol.51 (1), p.301-304</ispartof><rights>2020 The Society for Information Display</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1463-da3dc71d8c2cbae2c911e08b9ffb6fb755047487f2dc68e187587eb2e257e2133</citedby><cites>FETCH-LOGICAL-c1463-da3dc71d8c2cbae2c911e08b9ffb6fb755047487f2dc68e187587eb2e257e2133</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Seo, Hyun-Sik</creatorcontrib><creatorcontrib>Cao, Weiran</creatorcontrib><creatorcontrib>Xiao, Jun Cheng</creatorcontrib><creatorcontrib>Wu, Yuan-Chun</creatorcontrib><creatorcontrib>Zhao, Bin</creatorcontrib><creatorcontrib>ZHANG, Xin</creatorcontrib><creatorcontrib>Yan, Xiaolin</creatorcontrib><title>21‐3: Invited Paper: High Quality 8K4K Displays driven by Oxide Semiconductor Thin Film Transistor in the Generation 11 Equipment</title><title>SID International Symposium Digest of technical papers</title><description>We have been developing amorphous‐InGaZnO (a‐IGZO) thin film transistors (TFTs) in generation 11 equipment, which has the cost advantage for future premium displays compared to generation 8.5. One Gate One Data (1G1D) 8K4K 85 inch GOA LCD TV has been developed using 4 mask back channel etched (BCE) structure. A 32 inch UD ink jet printing (IJP) OLED TV, oriented to 65 inch 8K4K TVs, driven by self‐aligned coplanar structure TFTs has been demonstrated adopting TFTs with transparent storage and 3.8um contact hole design. InGaSnO (IGTO) TFTs with the mobility of ~ 30 cm2V‐1s‐1 have been deveoped for future applications such as narrow bezel OLEDs and self‐luminous mini‐LEDs/micro LEDs with internal compensation circuit.</description><subject>8K4K</subject><subject>AMLCD</subject><subject>AMOLED</subject><subject>BCE 4 Mask</subject><subject>Circuits</subject><subject>Contact holes</subject><subject>Displays</subject><subject>Equipment costs</subject><subject>Indium gallium zinc oxide</subject><subject>Inkjet printing</subject><subject>Oxide-Semiconductor TFTs</subject><subject>Self-Aligned Coplanar</subject><subject>Semiconductor devices</subject><subject>Thin film transistors</subject><subject>Thin films</subject><issn>0097-966X</issn><issn>2168-0159</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kMtKxDAUhoMoOF42PkHAnVDNpZd0djLOqCg4YgV3JU1OnUgnrUk72p3gC_iMPokdx7WrAz_f_x_4EDqi5JQSws68bptTykXMt9CI0VgEhEbpNhoRkiZBGsdPu2jP-xdCOA_DdIQ-Gf3--OJjfG1XpgWN57IBN8ZX5nmB7ztZmbbH4ia8wRfGN5XsPdbOrMDiosd370YDfoClUbXVnWprh7OFsXhmqiXOnLTe-HU4RO0C8CVYcLI1tcWU4ulrZ5ol2PYA7ZSy8nD4d_fR42yaTa6C27vL68n5baBoGPNAS65VQrVQTBUSmEopBSKKtCyLuCySKCJhEoqkZFrFAqhIIpFAwYBFCTDK-T463uw2rn7twLf5S905O7zMWRhGKRdDYaBONpRytfcOyrxxZildn1OSryXna8n5r-QBphv4zVTQ_0PmDxfZfNP5AcemgBM</recordid><startdate>202008</startdate><enddate>202008</enddate><creator>Seo, Hyun-Sik</creator><creator>Cao, Weiran</creator><creator>Xiao, Jun Cheng</creator><creator>Wu, Yuan-Chun</creator><creator>Zhao, Bin</creator><creator>ZHANG, Xin</creator><creator>Yan, Xiaolin</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>202008</creationdate><title>21‐3: Invited Paper: High Quality 8K4K Displays driven by Oxide Semiconductor Thin Film Transistor in the Generation 11 Equipment</title><author>Seo, Hyun-Sik ; Cao, Weiran ; Xiao, Jun Cheng ; Wu, Yuan-Chun ; Zhao, Bin ; ZHANG, Xin ; Yan, Xiaolin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1463-da3dc71d8c2cbae2c911e08b9ffb6fb755047487f2dc68e187587eb2e257e2133</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>8K4K</topic><topic>AMLCD</topic><topic>AMOLED</topic><topic>BCE 4 Mask</topic><topic>Circuits</topic><topic>Contact holes</topic><topic>Displays</topic><topic>Equipment costs</topic><topic>Indium gallium zinc oxide</topic><topic>Inkjet printing</topic><topic>Oxide-Semiconductor TFTs</topic><topic>Self-Aligned Coplanar</topic><topic>Semiconductor devices</topic><topic>Thin film transistors</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Seo, Hyun-Sik</creatorcontrib><creatorcontrib>Cao, Weiran</creatorcontrib><creatorcontrib>Xiao, Jun Cheng</creatorcontrib><creatorcontrib>Wu, Yuan-Chun</creatorcontrib><creatorcontrib>Zhao, Bin</creatorcontrib><creatorcontrib>ZHANG, Xin</creatorcontrib><creatorcontrib>Yan, Xiaolin</creatorcontrib><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>SID International Symposium Digest of technical papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Seo, Hyun-Sik</au><au>Cao, Weiran</au><au>Xiao, Jun Cheng</au><au>Wu, Yuan-Chun</au><au>Zhao, Bin</au><au>ZHANG, Xin</au><au>Yan, Xiaolin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>21‐3: Invited Paper: High Quality 8K4K Displays driven by Oxide Semiconductor Thin Film Transistor in the Generation 11 Equipment</atitle><jtitle>SID International Symposium Digest of technical papers</jtitle><date>2020-08</date><risdate>2020</risdate><volume>51</volume><issue>1</issue><spage>301</spage><epage>304</epage><pages>301-304</pages><issn>0097-966X</issn><eissn>2168-0159</eissn><abstract>We have been developing amorphous‐InGaZnO (a‐IGZO) thin film transistors (TFTs) in generation 11 equipment, which has the cost advantage for future premium displays compared to generation 8.5. One Gate One Data (1G1D) 8K4K 85 inch GOA LCD TV has been developed using 4 mask back channel etched (BCE) structure. A 32 inch UD ink jet printing (IJP) OLED TV, oriented to 65 inch 8K4K TVs, driven by self‐aligned coplanar structure TFTs has been demonstrated adopting TFTs with transparent storage and 3.8um contact hole design. InGaSnO (IGTO) TFTs with the mobility of ~ 30 cm2V‐1s‐1 have been deveoped for future applications such as narrow bezel OLEDs and self‐luminous mini‐LEDs/micro LEDs with internal compensation circuit.</abstract><cop>Campbell</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/sdtp.13863</doi><tpages>4</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0097-966X |
ispartof | SID International Symposium Digest of technical papers, 2020-08, Vol.51 (1), p.301-304 |
issn | 0097-966X 2168-0159 |
language | eng |
recordid | cdi_proquest_journals_2445938587 |
source | Wiley-Blackwell Read & Publish Collection |
subjects | 8K4K AMLCD AMOLED BCE 4 Mask Circuits Contact holes Displays Equipment costs Indium gallium zinc oxide Inkjet printing Oxide-Semiconductor TFTs Self-Aligned Coplanar Semiconductor devices Thin film transistors Thin films |
title | 21‐3: Invited Paper: High Quality 8K4K Displays driven by Oxide Semiconductor Thin Film Transistor in the Generation 11 Equipment |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T13%3A16%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=21%E2%80%903:%20Invited%20Paper:%20High%20Quality%208K4K%20Displays%20driven%20by%20Oxide%20Semiconductor%20Thin%20Film%20Transistor%20in%20the%20Generation%2011%20Equipment&rft.jtitle=SID%20International%20Symposium%20Digest%20of%20technical%20papers&rft.au=Seo,%20Hyun-Sik&rft.date=2020-08&rft.volume=51&rft.issue=1&rft.spage=301&rft.epage=304&rft.pages=301-304&rft.issn=0097-966X&rft.eissn=2168-0159&rft_id=info:doi/10.1002/sdtp.13863&rft_dat=%3Cproquest_cross%3E2445938587%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c1463-da3dc71d8c2cbae2c911e08b9ffb6fb755047487f2dc68e187587eb2e257e2133%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2445938587&rft_id=info:pmid/&rfr_iscdi=true |