65‐3: Green Top‐emission Quantum Dot Light‐emitting Diodes (TE‐QLED) with Normal and Inverted Structure

In this work, green top emission quantum dot light‐emitting diodes with different structure, that are normal and inverted structure, were demonstrated. The device characterization of these two device are compared. The QLED with inverted structure exhibits better device performance than normal one. C...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2020-08, Vol.51 (1), p.968-970
Main Authors: Lin, Kun-Rong, Lee, Chun-Yu, Ding, Wen-Cheng, Chen, Chia-Hsun, Chien, Da-Chen, Kuo, Ya-Pei, Chen, Peng-Yu, Lu, Hsueh-Hsing, Chiu, Tien-Lung, Lin, Bo-Yen, Lee, Jiun-Haw
Format: Article
Language:English
Subjects:
Current efficiency
Emission
Green QLED
inverted structure
lifetime d fluorescence
Quantum dots
Quantum efficiency
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Summary:In this work, green top emission quantum dot light‐emitting diodes with different structure, that are normal and inverted structure, were demonstrated. The device characterization of these two device are compared. The QLED with inverted structure exhibits better device performance than normal one. Current efficiency is improved from 26.9 to 42.5 cd/A, as well as the external quantum efficiency is improved from 5.32 to 9.42 %. Operational lifetime of inverted structure is longer and more reliable than normal structure by ~10‐times.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.14033