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38‐1: Invited Paper: High‐Performance Metal‐Oxide Semiconductor based Optoelectronics

We investigated high‐performance amorphous metal‐oxide semiconductor based optoelectronics using low‐temperature and solution process technologies. In particular, metal‐oxide and quantum dots hybrid phototransistors exhibited ultra‐high photodetectivity up to 4×1017Jones in a broad range of detectio...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2020-08, Vol.51 (1), p.536-539
Main Authors: Kim, Jaehyun, Kwon, Sung Min, Jo, Jeong-Wan, Jo, Chanho, Kim, Jaekyun, Kim, Yong-Hoon, Kim, Myung-Gil, Park, Sung Kyu
Format: Article
Language:English
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Summary:We investigated high‐performance amorphous metal‐oxide semiconductor based optoelectronics using low‐temperature and solution process technologies. In particular, metal‐oxide and quantum dots hybrid phototransistors exhibited ultra‐high photodetectivity up to 4×1017Jones in a broad range of detection wavelength from ultraviolet to infrared ranges. In addition, we employed artificial visual perception circuit based on metal‐oxide synaptic transistors with metal chalcogenide semiconductors for optoelectronic neuromorphic devices. We also demonstrated large‐scaled ultra‐flexible and stretchable device showing promising next‐generation wearable optoelectronics.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.13923