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20‐3: Universal Method to Inject Electrons into Organic Semiconductors Utilizing Hydrogen Bonds

We have developed a universal method to inject electrons into organic semiconductors without using unstable conventional n‐dopants. The reduction of the injection barrier is induced by the formation of hydrogen bonds between a base, which is widely used as a catalyst in organic syntheses, and an org...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2020-08, Vol.51 (1), p.285-288
Main Authors: Fukagawa, Hirohiko, Hasegawa, Munehiro, Morii, Katsuyuki, Oono, Taku, Sasaki, Tsubasa, Shimizu, Takahisa
Format: Article
Language:English
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Summary:We have developed a universal method to inject electrons into organic semiconductors without using unstable conventional n‐dopants. The reduction of the injection barrier is induced by the formation of hydrogen bonds between a base, which is widely used as a catalyst in organic syntheses, and an organic semiconductor.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.13859