Si Nanowire With Integrated Space-Charge- Limited Conducted Schottky Junction for Enhancing Field Electron Emission and Its Gated Devices

Integrated field emission electron sources with low driving voltage are desired for micro/nano vacuum electronics. Herein, we demonstrate the enhanced and stable electron emission from crystalline gold-silver (Au-Ag) alloy nanoparticle capped Si nanowires (SiNWs) and the achieved gated electron sour...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2020-10, Vol.67 (10), p.4467-4472
Main Authors: Zeng, Miaoxuan, Huang, Yifeng, Lu, Yaowen, Yu, Jiajie, Gu, Zengjie, Yang, Wei, Chen, Jun, She, Juncong, Deng, Shaozhi
Format: Article
Language:English
Subjects:
Au-Ag alloy nanoparticles
ballasted unit
Computer simulation
Electric potential
Electron emission
Electron sources
field electron emission
Field emission
Gold
Junctions
Logic gates
Metals
Nanoalloys
Nanoparticles
Nanowires
Negative feedback
Scanning electron microscopy
Schottky junction
Self alignment
Si nanowires (SiNWs)
Silicon
Silver
space-charge-limited (SCL) conduction
Voltage
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Summary:Integrated field emission electron sources with low driving voltage are desired for micro/nano vacuum electronics. Herein, we demonstrate the enhanced and stable electron emission from crystalline gold-silver (Au-Ag) alloy nanoparticle capped Si nanowires (SiNWs) and the achieved gated electron sources with low driving voltage (
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2020.3019231