Correlation between the step–terrace structure and the nitrogen doping variation observed on the ( 000 1 ¯ ) facet of 4H-SiC crystals

The variation in nitrogen doping concentration on the ( 000 1 ¯ ) facet of 4H-SiC single crystals grown by the physical vapor transport (PVT) growth method was investigated using Raman scattering microscopy. The observed variation was well correlated with the terrace-width variation in the step–terr...

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Bibliographic Details
Published in:Journal of applied physics 2020-10, Vol.128 (13)
Main Authors: Yokomoto, Kaito, Yabu, Masahiro, Hashiguchi, Takato, Ohtani, Noboru
Format: Article
Language:English
Subjects:
Applied physics
Channeling
Crystal growth
Doping
Nitrogen
Raman spectra
Single crystals
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Summary:The variation in nitrogen doping concentration on the ( 000 1 ¯ ) facet of 4H-SiC single crystals grown by the physical vapor transport (PVT) growth method was investigated using Raman scattering microscopy. The observed variation was well correlated with the terrace-width variation in the step–terrace structure on the facet; regions with unevenly distributed terrace-widths always showed a lower nitrogen concentration compared to those having evenly distributed terrace-widths. It was revealed by low-energy electron channeling contrast imaging that in lower nitrogen concentration regions, terraces with two dangling bonds per silicon atom at the step riser in the step-down direction always became wider. On the basis of these experimental results, the nitrogen incorporation kinetics during PVT growth of 4H-SiC crystals was discussed.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0009784