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Low-temperature formation of platinum silicides on polycrystalline silicon
Phase formation and transitions in platinum silicide films on polycrystalline Si in the process of Pt magnetron sputtering and heat treatments at different temperatures are studied using X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and X-ray diffractometry. Phas...
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Published in: | Journal of alloys and compounds 2020-11, Vol.843, p.155908, Article 155908 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Phase formation and transitions in platinum silicide films on polycrystalline Si in the process of Pt magnetron sputtering and heat treatments at different temperatures are studied using X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and X-ray diffractometry. Phases of amorphous and polycrystalline Pt3Si and Pt2Si are shown to form during the room-temperature Pt deposition on poly-Si beneath the Pt layer. The relaxation of the interfacial film and partial transformation of Pt3Si into Pt2Si occurs as a result of the thermal treatment for 30 min in the temperature range from 125°C to 300°С. The Pt3Si and Pt2Si phases crystallize to PtSi due to annealing at the temperatures from 320°C to 480°С for the same time period.
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•Interface domain in magnetron sputtered and annealed Pt/poly-Si film is studied.•Pt3Si and Pt2Si phases form at room temperature during Pt deposition on poly-Si.•Interfacial film relaxation turns Pt3Si to Pt2Si due to annealing at 100 |
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ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2020.155908 |