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Low-temperature formation of platinum silicides on polycrystalline silicon

Phase formation and transitions in platinum silicide films on polycrystalline Si in the process of Pt magnetron sputtering and heat treatments at different temperatures are studied using X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and X-ray diffractometry. Phas...

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Bibliographic Details
Published in:Journal of alloys and compounds 2020-11, Vol.843, p.155908, Article 155908
Main Authors: Chizh, Kirill V., Dubkov, Vladimir P., Senkov, Vyacheslav M., Pirshin, Igor V., Arapkina, Larisa V., Mironov, Sergey A., Orekhov, Andrey S., Yuryev, Vladimir A.
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Language:English
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Summary:Phase formation and transitions in platinum silicide films on polycrystalline Si in the process of Pt magnetron sputtering and heat treatments at different temperatures are studied using X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and X-ray diffractometry. Phases of amorphous and polycrystalline Pt3Si and Pt2Si are shown to form during the room-temperature Pt deposition on poly-Si beneath the Pt layer. The relaxation of the interfacial film and partial transformation of Pt3Si into Pt2Si occurs as a result of the thermal treatment for 30 min in the temperature range from 125°C to 300°С. The Pt3Si and Pt2Si phases crystallize to PtSi due to annealing at the temperatures from 320°C to 480°С for the same time period. [Display omitted] •Interface domain in magnetron sputtered and annealed Pt/poly-Si film is studied.•Pt3Si and Pt2Si phases form at room temperature during Pt deposition on poly-Si.•Interfacial film relaxation turns Pt3Si to Pt2Si due to annealing at 100
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2020.155908