Near-Carrier Phase Noise Suppression at Turnover Temperature in a Thin-Film Piezoelectric-on-Silicon Oscillator

In this paper, the near-carrier enhancement of phase-noise (PN) at turnover temperature ( {T} _{to} ) in a quasi-thickness-Lamé (QTL) mode thin-film piezoelectric-on-silicon (TPoS) oscillator is reported for the first time. QTL-TPoS resonators fabricated on degenerately-doped n-type silicon offer a...

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Bibliographic Details
Published in:Journal of microelectromechanical systems 2020-10, Vol.29 (5), p.804-810
Main Authors: Majd, Yasaman, Shahraini, Sarah, Goodale, Garett, Hofstee, Heather, Miri Lavasani, Hossein, Abdolvand, Reza
Format: Article
Language:English
Subjects:
Carrier frequencies
Heating systems
Noise
Noise reduction
Oscillators
Phase noise
Piezoelectricity
Resonant frequency
Resonators
Room temperature
Silicon
temperature fluctuation
Temperature measurement
thickness-Lamé mode
Thin films
Turnover temperature
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Summary:In this paper, the near-carrier enhancement of phase-noise (PN) at turnover temperature ( {T} _{to} ) in a quasi-thickness-Lamé (QTL) mode thin-film piezoelectric-on-silicon (TPoS) oscillator is reported for the first time. QTL-TPoS resonators fabricated on degenerately-doped n-type silicon offer a {T} _{to} greater than 80°C and are suitable for implementation of highly-stable ovenized oscillators. In this work, a ~123MHz QTL-TPoS resonator is heated up to {T} _{to} (~90°C) by injecting current through the silicon body of the resonator. It is experimentally observed that at turnover temperature, the phase-noise slope close to the carrier frequency ( \Delta f < 100Hz ) decreases substantially in contrast to the expected trends. A ~10dB improvement in phase noise at 10Hz offset and a ~25dB improvement at 1Hz offset is recorded when the oscillator is operating at {T} _{to} compared to room temperature. [2020-0206]
ISSN:1057-7157
1941-0158
DOI:10.1109/JMEMS.2020.3004317