Investigation of Built-in Electric Fields at the GaSe/GaAs Interface by Photoreflectance Spectroscopy

Built-in electric fields appear during the molecular-beam epitaxy of GaSe on a GaAs(001) substrate at the GaSe/GaAs interface, the presence of the fields is evidenced by Franz–Keldysh oscillations observed in photoreflectance spectra. The varying values of the strength of these fields (from 9.8 to 1...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2020-10, Vol.54 (10), p.1198-1204
Main Authors: Komkov, O. S., Khakhulin, S. A., Firsov, D. D., Avdienko, P. S., Sedova, I. V., Sorokin, S. V.
Format: Article
Language:English
Subjects:
Buffer layers
Construction
Diffusion layers
Electric fields
Epitaxial growth
Epitaxy
Gallium arsenide
Gallium selenides
Interfaces
Investigations
Magnetic Materials
Magnetism
Molecular beam epitaxy
Physics
Physics and Astronomy
Spectrum analysis
Substrates
Surfaces
Thin Films
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Summary:Built-in electric fields appear during the molecular-beam epitaxy of GaSe on a GaAs(001) substrate at the GaSe/GaAs interface, the presence of the fields is evidenced by Franz–Keldysh oscillations observed in photoreflectance spectra. The varying values of the strength of these fields (from 9.8 to 17.6 kV/cm) can be associated both with the diffusion of Se atoms into the GaAs substrate (buffer layer) and with the formation of transient submonolayers during epitaxial growth. Built-in fields are not observed at the interface of structures grown on GaAs(111)B and GaAs(112) substrates, which can be explained by the lower propagation efficiency of Se into the substrate with mentioned orientations when compared with GaAs(001).
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782620100176