Strong spin-orbit interactions in a correlated two-dimensional electron system formed in SrTi O3 (001) films grown epitaxially on p− Si(001)

We observe strong spin-orbit interactions in a two-dimensional electron system formed on SrTi O3 (001) films grown epitaxially on p-Si(001). High-resolution transmission electron microscopy and related analytical techniques reveal a sharp interface between Si and SrTi O3. Strain mapping analysis sho...

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Bibliographic Details
Published in:Physical review. B 2020-09, Vol.102 (12), p.1
Main Authors: Cottier, Ryan J, Koehne, Barry D, Miracle, John T, Currie, Daniel A, Theodoropoulou, Nikoleta, Pantelidis, Leonidas, Hernandez-Robles, Andrei, Ponce, Arturo
Format: Article
Language:English
Subjects:
Carrier density
Electron spin
Electrons
Epitaxial growth
Hall effect
Low temperature
Plane strain
Quantum phenomena
Resistance
Spin-orbit interactions
Strain analysis
Temperature dependence
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Summary:We observe strong spin-orbit interactions in a two-dimensional electron system formed on SrTi O3 (001) films grown epitaxially on p-Si(001). High-resolution transmission electron microscopy and related analytical techniques reveal a sharp interface between Si and SrTi O3. Strain mapping analysis shows in-plane strain in SrTi O3 very close to the interface. Analysis of the low temperature magnetoconductance measurements reveals that both quantum interference and electron-electron interactions are important. The contributions of these two quantum phenomena to the temperature and magnetic field dependence of the conductance and Hall effect are separated. The electron system has carrier concentrations larger than 1014 cm−2, appears to be confined within ∼4 nm, and has an estimated spin-splitting energy ∼12 meV.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.102.125423