Epitaxial superconducting δ-MoN and δ-NbN thin films by a chemical solution deposition

• Published in: Journal of alloys and compounds 2020-06, Vol.826, p.154231, Article 154231
• Main Authors: Tong, H.Y., Zhang, H.L., Hui, Z.Z., Tang, X.W., Wei, R.H., Song, W.H., Hu, L., Cai, C.B., Zhu, X.B., Sun, Y.P.
• Format: Article
• Language: English
• Subjects: Aluminum oxide; Chemical solution deposition; Critical current density; Deposition; Epitaxial thin film; Epitaxy; Magnetism; Metal nitrides; Niobium nitride; Residual resistivity; Resistivity ratio; Substrates; Superconducting; Superconductivity; Thin films; Transition temperature
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2020.154231

Epitaxial superconducting δ-MoN and δ-NbN thin films, exhibiting a superconducting transition temperature (Tconset) of 13 K and 10.3 K, respectively, were prepared by a simple chemical solution deposition on c-cut Al2O3 substrates. A sharp transition and the large residual resistivity ratio (RRR) ρ300K/ρonset of δ-MoN and δ-NbN thin films suggest high quality of the prepared epitaxial thin films. The critical current density (Jc) under 100 Oe at 5 K is of 1.37 and 0.74 MA/cm2 for the δ-MoN and δ-NbN thin films, respectively. The results will provide a facile route to prepare epitaxial superconducting metal nitride thin films. •Epitaxial δ-MoN and δ-NbN thin films were successfully prepared by a simple chemical solution deposition.•The epitaxial δ-MoN thin film shows a Tonset c of 13 K with a transition width of 0.17 K and the δ-NbN thin film shows a Tonset c of 10.3 K with a transition width of 0.27 K.•Detailed electrical and magnetic properties were characterized and discussed.