Flexible nanocomposite films of CoFe2O4/(0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3)/PMMA for non-volatile memory applications

• Published in: Materials letters 2020-11, Vol.278, p.128425, Article 128425
• Main Authors: Ahlawat, Anju, Ali Khan, Azam, Deshmukh, Pratik, Shirolkar, Mandar M., Li, Jieni, Wang, Haiqian, Choudhary, R.J., Karnal, A.K., Satapathy, S.
• Format: Article
• Language: English
• Subjects: Cobalt ferrites; Electric fields; Functional; Materials science; Memory devices; Nanocomposites; Polymethyl methacrylate; Power consumption; Room temperature; Switching
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2020.128425

•Synthesis of Flexible CoFe2O4/ PMN-PT/PMMA nanocomposite films.•Study of structural, ferroelectric, magnetic and magneto-electric response.•Utilization of CoFe2O4/ PMN-PT/PMMA nanocomposite films for non volatile memory applications with low power consumption. In this work flexible magnetoelectric CoFe2O4(CFO)/(0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3)(PMN-PT)/PMMA nanocomposite films are investigated fornon-volatilememorydevicecharacteristics. The films exhibit magnetoelectric (ME) effects at room temperature and ME output voltage (α) is found to be ~ 35 mVcm−1Oe−1. The films revealed repeatable switching of a sign of α by applying positive and negative electric pulse during the eighteen cycles for 3500 s. The two states of α can be used to store binary bits in non volatile manner. The nanocomposite films exhibit non-volatile memory characteristics with the α retention time of ~104 s. The electric-field-controlled switching of α in CFO/PMN-PT/PMMA films offers energy-efficient approach for low-power-consumption non-volatilememorydevices. The writing and reading operations could be performed in a nondestructive manner.