Formation of Si nanocrystals in LP CVD semi-insulating polycrystalline silicon films

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2020-09, Vol.259, p.114575, Article 114575
• Main Authors: Domashevskaya, E.P., Terekhov, V.A., Parinova, E.V., Sinelnikov, A.A., Kharin, A.N., Prizhimov, A.S., Turishchev, S.Yu
• Format: Article
• Language: English
• Subjects: Atomic and electronic structure; Electronic structure; Grain size; Inclusions; Low pressure; Low temperature; Nanocrystals; Photovoltaic cells; Polycrystals; Polysilicon; Semi-insulating polycrystalline silicon; Silicon films; Silicon nanocrystals; Thin films; Transmission electron microscopy; Ultrasoft X-ray emission spectroscopy; Vapor phases
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/j.mseb.2020.114575

•Size-controlled Si nanocrystals formation for LP CVD SIPOS layers.•LP CVD SIPOS layers with size-controlled Si nanocrystals atomic and electronic structure.•Oxygen doping of LP CVD SIPOS layers decreases Si nanocrystals mean size.•Oxygen doping is a key for LP CVD SIPOS layers electronic structure engineering. Influence of oxygen on silicon nanocrystals formation peculiarities and size in semi-insulating polycrystalline silicon thin films has been demonstrated by the means of local atomic surrounding sensitive electronic structure experimental studies. Low-pressure chemical deposition from the gas phase at a relatively low temperature leads to formation of semi-insulating polycrystalline silicon film containing nanocrystals with the grain size of 20–40 nm. At the same time, films oxygen doping result in formation of silicon nanocrystals arrays with the mean particle size less than 10 nm. Possibility of size-controlled Si nanocrystals formation followed by electronic structure reconstruction of amorphous films with nanocrystalline inclusions is discussed and can be found prospective for a range of possible applications.