Vertically aligned silicon nanowire arrays prepared by silver assisted single step chemical etching

• Main Authors: Sarkar, Kalyan, Das, Debajyoti
• Format: Conference Proceeding
• Language: English
• Subjects: Arrays; Chemical etching; Etching; Nanowires; Reflectance; Room temperature; Silicon
• ISSN: 0094-243X; 1551-7616
• DOI: 10.1063/5.0017872

Vertically aligned arrays of silicon nanowires (Si-NWs) have been fabricated via one-step, simple and cost-effective silver assisted chemical etching of crystalline Si-wafers at room temperature. A detailed study has been done on pursuing the growth characteristics of the Si-NWs prepared at different span of etching time. A linear relation has been established between the length of the nanowires and the etching period. Significant change in the reflectance spectra has been demonstrated leading to a gross reduction in the optical reflectance from ∼37% to less than 7%. In comparison with bulk c-Si, the Si-NW arrays with its elevated surface area facilitate efficiently absorbing light, while significantly reducing the reflection-loss; thereby, could favourably promote skilful light harvesting for photovoltaic applications.