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Y doped ZnO interdigitated electrode(IDE) ammonia sensor fabricated by sputtering

Interdigitated electrode (IDE) based Yttrium (2 mol%) doped ZnO sensor was fabricated by R.F. Sputtering for room temperature ammonia sensing. Initially, IDE was fabricated on Si(100) substrates using Ag by DC sputtering. Then the Y doped ZnO sensing layer was deposited over IDE. The fabricated devi...

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Bibliographic Details
Main Authors: Vinoth, E., Gopalakrishnan, N.
Format: Conference Proceeding
Language:English
Subjects:
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Summary:Interdigitated electrode (IDE) based Yttrium (2 mol%) doped ZnO sensor was fabricated by R.F. Sputtering for room temperature ammonia sensing. Initially, IDE was fabricated on Si(100) substrates using Ag by DC sputtering. Then the Y doped ZnO sensing layer was deposited over IDE. The fabricated device has been characterised by X-ray diffraction (XRD), Photoluminescence (PL) and I-V. It was observed by XRD that preferential orientation is along (002) plane. Y3+ incorporation leads the more oxygen vacancies, andit was confirmed by the photoluminescence (PL) spectra. The schotty behavior has been found by the current-voltage characteristics. The room temperature ammonia sensing was performed for the fabricated device and the fast response of 49 s & quick recovery of 58 s wereobserved. The ammonia response measurement implies that the fabricated sensor is a suitable candidate for the ammonia sensing.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0017653