Defect-state mediated excitonic transitions and associated electrical nature in exfoliated MoS2 nanostructures

Layered materials like graphene, transition metal dichalcogenides (TMDs) etc. are of great importance in nanoelectronics and optoelectronics. Various exfoliation techniques used for the isolation into thin layers of these materials can impart different type of atomic defects in the system. The prese...

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Bibliographic Details
Main Authors: Reshmi, S., Mohan, Manu, Bhattacharjee, K.
Format: Conference Proceeding
Language:English
Subjects:
Defects
Exfoliation
Graphene
Layered materials
Molybdenum disulfide
Nanoelectronics
Nanostructure
Optoelectronics
Photoluminescence
Thin films
Transition metal compounds
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Summary:Layered materials like graphene, transition metal dichalcogenides (TMDs) etc. are of great importance in nanoelectronics and optoelectronics. Various exfoliation techniques used for the isolation into thin layers of these materials can impart different type of atomic defects in the system. The presence of defects can highly modify the properties displayed by them. Significant features related to the defect states can also show up in the optical spectroscopy results. Here, we discuss about the defect related modifications of photoluminescence peaks obtained from our as-synthesized MoS2 sample comprised of nanostructures and nanosheets and the associated electrical behavior.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0016958