Room temperature electroluminescence from Laser MBE grown Gallium nitride LEDs

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2020-10, Vol.260, p.114655, Article 114655
• Main Authors: Dewan, Sheetal, Tomar, Monika, Tandon, R.P., Gupta, Vinay
• Format: Article
• Language: English
• Subjects: Current voltage characteristics; Electroluminescence; Emission; Gallium Nitride (GaN); Gallium nitrides; Indium gallium nitrides; Injection current; Laser beams; Laser MBE; LED; Molecular beam epitaxy; P-i-n junctions; Quantum wells; Room temperature; Threshold voltage; UHV-PLD
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/j.mseb.2020.114655

•Inverted p-i-n junction and MQW InGaN/GaN LEDs fabricated using Laser MBE technique.•InGaN active layers realized at low growth temperature (575 °C).•Room temperature electroluminescence observed in both the LEDs.•Detailed discussion on emission characteristics is presented. Gallium Nitride (GaN) based inverted p-i-n junction and InGaN/GaN quantum well LEDs have been demonstrated using Laser Molecular Beam Epitaxy technique. The fabricated p-i-n junction and QW LEDs exhibited rectifying I-V characteristics with a forward threshold voltage of about 3.4 V and 4.5 V, respectively. The electrically injected LEDs showed room temperature electroluminescence, wherein inverted p-i-n junction LED exhibited single peaked UV emission around 365 nm wavelength and the InGaN/GaN QW LED demonstrated both UV (368 nm) and visible (430 nm) spectral components. The emission in QW LED was found to exhibit a spectral blue shift with increasing injection current.