Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN. This device structure enabled scaling of breakdo...

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Bibliographic Details
Published in:IEEE electron device letters 2020-12, Vol.41 (12), p.1758-1761
Main Authors: Han, Sang-Woo, Song, Jianan, Yoo, Sang Ha, Ma, Ziguang, Lavelle, Robert M., Snyder, David W., Redwing, Joan M., Jackson, Thomas N., Chu, Rongming
Format: Article
Language:English
Subjects:
Doping
dynamic on-resistance
ENGINEERING
Etching
Gallium nitride
Gallium nitrides
Heterojunctions
Power semiconductor devices
Schottky barrier diode
Schottky barriers
Schottky diodes
super junction
Switching
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Summary:This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN. This device structure enabled scaling of breakdown voltage to over 3 kV, and dynamic switching up to 2.8 kV without using any field-plate.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2020.3029619