Synthesis and thermal simulations of novel encapsulated CNT multifunctional thin-film based nanomaterial of SiO2-CNT and TiN-CNT by PVD and PECVD techniques for thermal applications

• Published in: Diamond and related materials 2020-11, Vol.109, p.108029, Article 108029
• Main Authors: Krishna, Ankit, T., Gecil Evangeline, L.S., Aravinda, N., Sharath Kumar, K, Niranjan Reddy, N., Balashanmugam, Mamilla, Ravi Sankar
• Format: Article
• Language: English
• Subjects: 2D-Nanocomposites; CAD; Carbon nanotubes; Chemical vapor deposition; Composite materials; Compression tests; Computer aided design; Energy dissipation; Field emission; Hardness; Heat flux; Multilayers; Nanoindentation; Nanomaterials; Physical vapor deposition; Plasma enhanced chemical vapor deposition; Radio frequency plasma; Raman spectroscopy; Room temperature; Silicon dioxide; Silicon substrates; Simulation; Simulation and Modelling; Software; Spectrum analysis; Thermal simulation; Thin films; Titanium nitride; Transmission electron microscopy; Two dimensional materials
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/j.diamond.2020.108029

This research work focuses on synthesizing novel multi-layer thin-film 2D material which consists of CNTs as-synthesized thin film as the base material. These thin films could be used in various applications such as field emission materials, structural reinforcement, thermal dissipation, etc. Nearly vertically aligned carbon nanotubes (CNTs) were synthesized on a silicon substrate using Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD). In the current research, thin films of Titanium Nitride (TiN) and Silicon Dioxide (SiO2) is deposited on CNTs using Physical Vapor Deposition (PVD) technique. Transmission Electron Microscope (TEM) results indicate the presence of polycrystalline and amorphous features in TiN/CNT and SiO2/CNT composites. Energy Dispersive X-Ray Spectroscopy (EDS) in the TEM has been used to identify the deposited elements. Raman spectroscopy was used to determine the sp2, sp3 content and investigate the vibrational signature of molecules for the composites. The hardness of the composites was measured using nanoindentation. The hardness of TiN/CNT and SiO2/CNT calculated using values arising in compression testing of the films together is estimated to be 3.18 GPa and 2.80 GPa respectively. Thermal simulations to near synthesis material were carried out using Ansys software and found that a typical 80 °C temperature could be reduced to room temperature with the composite thin films. Simulations using software estimate the thermal heat flux for Si/CNT/TiN system is 1570 W/mm2 and the same for Si/CNT/SiO2 is 172.45 W/mm2. [Display omitted] •Novel work in encapsulating PECVD synthesised CNT film by RF sputtered TiN and SiO2.•Electron Microscopy divulged information of Multi Walls in CNTs, crystallanity and morphology of the nanomaterial.•he hardness of SiO2/CNT and TiN/CNT composite was calculated using nanoindentation is estimated to be 2.80 GPa & 3.18 GPa.•Mathematically, the equivalent resistances of Si/CNT/TiN and Si/CNT/ SiO2 networks were found to be 374.14 K/W & 3479.16 K/W.•Thermal heat flux simulations values for Si/CNT/TiN and Si/CNT/SiO2 network systems were 1570 W/mm2 & 172.45 W/mm2.