H-Band InP HBT Frequency Tripler Using the Triple-Push Technique

A broadband H-band (220 GHz–325 GHz) frequency tripler using the triple-push technique is presented in 250-nm InP heterojunction bipolar transistors (HBT) technology. It consisted of three identical unit-cell multipliers, which were individually pumped by the W-band input signals with 120° phase dif...

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Bibliographic Details
Published in:Electronics (Basel) 2020-12, Vol.9 (12), p.2081
Main Authors: Jeong, Jinho, Choi, Jisu, Kim, Jongyoun, Choe, Wonseok
Format: Article
Language:English
Subjects:
Bandwidths
Broadband
Circuits
Delay lines
Design
Frequency multipliers
Heterojunction bipolar transistors
Semiconductor devices
Semiconductors
Spectrum allocation
Transistors
Unit cell
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Summary:A broadband H-band (220 GHz–325 GHz) frequency tripler using the triple-push technique is presented in 250-nm InP heterojunction bipolar transistors (HBT) technology. It consisted of three identical unit-cell multipliers, which were individually pumped by the W-band input signals with 120° phase difference. For this purpose, a 120° 3-way power divider was proposed using the 1:2 and 1:1 Lange couplers with 30° phase delay lines. The fundamental and 2nd harmonic signals of each unit-cell multiplier were added out-of-phase at the output, allowing an effective harmonic suppression. On the contrast, the 3rd harmonic components were combined in-phase at the output, so that the entire circuit successfully did the function of the frequency multiplier-by-3. The fabricated frequency tripler exhibited a broadband output power of −7.4 ± 1.4 dBm from 225 GHz to 330 GHz at an input power of 9.6 ± 0.8 dBm, with an average conversion gain of −16.8 dB.
ISSN:2079-9292
2079-9292
DOI:10.3390/electronics9122081