Terahertz radiation of jerk photocurrent

We compute the jerk current tensor of GaAs, Si, and ferroelectric single-layer GeS, GeSe, SnS, and SnSe. We find peak values of the order of 1014 mA/V3s2 in GaAs and Si within the visible energy spectrum and an order of magnitude larger in single-layer GeS, GeSe, SnSe, and SnS. We show that the deta...

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Bibliographic Details
Published in:Physical review. B 2020-11, Vol.102 (19), p.1, Article 195410
Main Authors: Mendoza, Bernardo S., Fregoso, Benjamin M.
Format: Article
Language:English
Subjects:
Energy spectra
Ferroelectricity
Germanium sulfide
Mathematical analysis
Photoelectric effect
Photoelectric emission
Switches
Tensors
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Summary:We compute the jerk current tensor of GaAs, Si, and ferroelectric single-layer GeS, GeSe, SnS, and SnSe. We find peak values of the order of 1014 mA/V3s2 in GaAs and Si within the visible energy spectrum and an order of magnitude larger in single-layer GeS, GeSe, SnSe, and SnS. We show that the detailed knowledge of this tensor and its large value in single-layer GeS, GeSe, SnSe, and SnS make it possible to predict the magnitude and angle of rotation of polarization of intense terahertz pulses generated in photoconductive switches and point to alternative functionalities of these devices.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.102.195410