Ionic liquid gel gate tunable p-Si/MoS2 heterojunction p-n diode

Monolayer MoS2 crystals investigated in this work were grown via chemical vapor deposition on Si/SiO2 substrates. Using a wet KOH etch, these crystals were transferred onto the edge of a freshly cleaved p-Si/SiO2 wafer where they formed mechanically robust heterojunctions at the p-Si/MoS2 interface....

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Bibliographic Details
Published in:AIP advances 2020-12, Vol.10 (12), p.125225-125225-6
Main Authors: Figueroa, Kelotchi S., Pinto, Nicholas J., Wen, Chengyu, Johnson, A. T. Charlie, Zhao, Meng-Qiang
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Electrical properties
Energy levels
Heterojunctions
Ionic liquids
Ions
Molybdenum disulfide
Silicon dioxide
Silicon substrates
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Summary:Monolayer MoS2 crystals investigated in this work were grown via chemical vapor deposition on Si/SiO2 substrates. Using a wet KOH etch, these crystals were transferred onto the edge of a freshly cleaved p-Si/SiO2 wafer where they formed mechanically robust heterojunctions at the p-Si/MoS2 interface. Electrical characterization of the device across the junction yielded an asymmetric I–V response similar to that of a p-n diode. The I–V response was electrostatically tunable via an ionic liquid gel gate. This is the first report demonstrating reversible gate control of the p-Si/MoS2 diode current by several orders of magnitude while lowering its turn-on voltage. Fermi energy level shifts within the MoS2 bandgap by the gate was believed to be responsible for the observed effects. The ease of fabrication, low operating voltages (
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0030098