Recent progress in ferromagnetic semiconductors and spintronics devices

By actively using not only charge transport of electrons and holes but also their spins, we can create a variety of new phenomena and functional materials. It is highly expected that these new materials and phenomena are applied to the development of next-generation electronics and information techn...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2021-01, Vol.60 (1), p.10101
Main Author: Tanaka, Masaaki
Format: Article
Language:English
Subjects:
Charge transport
Ferromagnetic materials
ferromagnetic semiconductor
Functional materials
molecular beam epitaxy
semiconductor
Semiconductors
spin
spin transistor
Spintronics
Transistors
tunneling
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Summary:By actively using not only charge transport of electrons and holes but also their spins, we can create a variety of new phenomena and functional materials. It is highly expected that these new materials and phenomena are applied to the development of next-generation electronics and information technology. This field, called spintronics, is emerging and rapidly making progress in many subfields. This article focuses on one of the most important materials, ferromagnetic semiconductors (FMSs) which have the properties of both ferromagnets and semiconductors, and their applications. We review the recent progress in the studies of FMSs and their applications, particularly, spin transistors.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/abcadc