Field-Effect Transistors Based on Welded SnGaO Nanowire Networks

• Published in: IEEE electron device letters 2021-01, Vol.42 (1), p.58-61
• Main Authors: Fu, Chuanyu, Ding, Yanan, Zhu, Yixin, Xin, Zhijie, Liu, Guoxia, Shan, Fukai
• Format: Article
• Language: English
• Subjects: Artificial neural networks; Dielectrics; Electric potential; electro-spinning; Electronic devices; Field effect transistors; Gallium; Metal oxides; Nanowires; polymer blending; Polymers; Polymethyl methacrylate; Semiconductor devices; SnGaO nanowire networks; Strain; Transistors; Transport properties; Voltage; Welding
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2020.3042225

One-dimensional metal-oxide nanowire networks (NNs) are considered as important elements in electronics due to their unique physical and electrical performances. In this letter, Sn 1-x Ga x O NNs were fabricated and field-effect transistors (FETs) based on Sn 1-x Ga x O NNs with different Sn/Ga ratios were constructed. The characteristics of the FETs have been systematically investigated. In order to promote the adhesion and electrical performance of nanowires, Sn 1-x Ga x O NNs were welded by introducing the polymer mixture containing poly vinyl pyrrolidone and poly methyl methacrylate. Utilizing a welding process, the transport properties of Sn 1-x Ga x O NNs have been greatly promoted, and the FETs based on Sn 0.8 Ga 0.2 O NNs exhibit optimum electrical performance. Once integrated with high-k ZrO x dielectric, the FET based on Sn 0.8 Ga 0.2 O NNs/ZrO x exhibits high stability and high electrical performance, including \text{a}\mu _{\text{FE}} of 5.2 cm 2 /V s, an \text{I}_{\text{on}} /\text{I}_{\text{off}} of 1.5\times 10 ^{6} , a subthreshold voltage of 170 mV/decade, an on voltage of −0.25 V, and a negligible hysteresis of ~0.12 V. The successful fabrication of the FETs based on Sn 0.8 Ga 0.2 O NNs lays the foundation for the development of low-consumption, low-cost and high-performance electronic devices.