Electron Mobility Enhancement in GeSn n-Channel MOSFETs by Tensile Strain

A record high electron mobility of 698 cm 2 / \text{V}\cdot \text{s} in a tensile-strained Ge 0.96 Sn 0.04 nMOSFET is demonstrated in this letter. High-quality GeSn films were epitaxially grown by low-temperature chemical vapor deposition. Different strain conditions in the active GeSn layers were...

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Bibliographic Details
Published in:IEEE electron device letters 2021-01, Vol.42 (1), p.10-13
Main Authors: Chuang, Yen, Liu, Chia-You, Luo, Guang-Li, Li, Jiun-Yun
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Electron mobility
Epitaxial growth
Germanium
Germanium-tin (GeSn)
Intermetallic compounds
Junctions
Low temperature
MOSFET circuits
MOSFETs
nMOSFETs
P-n junctions
Substrates
Tensile strain
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Summary:A record high electron mobility of 698 cm 2 / \text{V}\cdot \text{s} in a tensile-strained Ge 0.96 Sn 0.04 nMOSFET is demonstrated in this letter. High-quality GeSn films were epitaxially grown by low-temperature chemical vapor deposition. Different strain conditions in the active GeSn layers were achieved by Ge or GeSn relaxed buffers. A mesa FET structure was used to effectively reduce the OFF leakage by a recessed p/n junction in Ge. The I ON /I OFF ratio in the mesa GeSn FETs is boosted by a factor of 100 compared to conventional planar devices. As the GeSn film becomes more tensile strained, the channel mobility is enhanced, which could be attributed to a higher carrier population in the {\Gamma } valley.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2020.3041051