Coating of a Nanostructured Profiled Si Surface with a SiC Layer

A method for coating of a profiled Si surface with a SiC layer, which completely retains the initial morphology of the Si surface, is developed. The SiC synthesis conditions are determined at which the initial profile of the Si surface is transformed into a profile coated with a SiC layer without ge...

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Bibliographic Details
Published in:Technical physics letters 2020-10, Vol.46 (10), p.1012-1015
Main Authors: Grashchenko, A. S., Kukushkin, S. A., Osipov, A. V.
Format: Article
Language:English
Subjects:
Classical and Continuum Physics
Coating
Physics
Physics and Astronomy
Silicon carbide
Synthesis
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Summary:A method for coating of a profiled Si surface with a SiC layer, which completely retains the initial morphology of the Si surface, is developed. The SiC synthesis conditions are determined at which the initial profile of the Si surface is transformed into a profile coated with a SiC layer without geometric distortions. It is confirmed experimentally that the critical synthesis temperature for the formation of this coating is 1050°C.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785020100235