Design and Analysis of Varactorless 65 nm MMW Voltage Controlled Oscillator

In this work a novel inductive tuning technique for millimeter wave (mmw) applications is presented. Fine frequency tuning is performed using a transformer. For the LC tanks inductive element, transformer is used. To tune the VCO MOS switch is placed at center tapping of the secondary coil of the tr...

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Bibliographic Details
Published in:Wireless personal communications 2020-10, Vol.114 (4), p.3655-3666
Main Authors: Ambulker, Sunanda, Nakhate, Sangeeta
Format: Article
Language:English
Subjects:
CMOS
Coils
Communications Engineering
Computer Communication Networks
Engineering
Figure of merit
Frequencies
Millimeter waves
Networks
Signal,Image and Speech Processing
Transformers
Tuning
Voltage controlled oscillators
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Summary:In this work a novel inductive tuning technique for millimeter wave (mmw) applications is presented. Fine frequency tuning is performed using a transformer. For the LC tanks inductive element, transformer is used. To tune the VCO MOS switch is placed at center tapping of the secondary coil of the transformer. The simulation shows that by changing the operating condition of MOS switch frequency band from 59.1 GHz to 64.6 GHz is obtained. The proposed 60 GHz VCO is designed using UMC 65 nm CMOS single Poly eight Metal (1P8M) Technology. Obtained Frequency Tuning Range (FTR) is 8.89% and the corresponding phase noise variation is from  − 112.4 dBc/Hz to  − 115.9 dBc/Hz at 10 MHz offset from the carrier. The worst phase noise value is  − 112.4 dBc/Hz which is obtained at 0.3 V tuning voltage. For 0.8 V supply voltage 7.44 mW of power is dissipated. And the calculated Figure of Merit (FOM) for whole FTR, ranges from  − 179.89 dBc/Hz to  − 182.62 dBc/Hz.
ISSN:0929-6212
1572-834X
DOI:10.1007/s11277-020-07551-4