Gate-bias tunable humidity sensors based on rhenium disulfide field-effect transistors

We investigate the humidity sensing performance and mechanism of few-layer-thick rhenium disulfide (ReS 2 ) field-effect transistors (FETs) under gate bias operation. Consequently, a negative gate bias exhibits the sensor response, exceeding 90% mainly in the low relative humidity (RH) range. Meanwh...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2021-05, Vol.60 (SB), p.SBBH01
Main Authors: Zulkefli, Amir, Mukherjee, Bablu, Iwasaki, Takuya, Hayakawa, Ryoma, Nakaharai, Shu, Wakayama, Yutaka
Format: Article
Language:English
Subjects:
Bias
Display devices
Field effect transistors
Gate-Bias Tunability
Humidity
Humidity Sensors
Relative humidity
Rhenium
Rhenium Disulfide
Semiconductor devices
Sensitivity
Sensors
Threshold voltage
Transistors
Two dimensional materials
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Summary:We investigate the humidity sensing performance and mechanism of few-layer-thick rhenium disulfide (ReS 2 ) field-effect transistors (FETs) under gate bias operation. Consequently, a negative gate bias exhibits the sensor response, exceeding 90% mainly in the low relative humidity (RH) range. Meanwhile, the threshold voltage change was discovered to be a superior sensing parameter to achieve a broad monitoring of RH range with high response and sensitivity. The approach obtained a practical sensitivity of 0.4 V per 1% RH, which exceed a majority of previous studies with the pristine 2D materials. Besides, our devices display reversible adsorption–desorption and long-term stability operations even after a one-month period. This suggests the sensor capacity to function in real-time applications with a short response and recovery times. These outcomes offer support in the development of adaptable tunable humidity sensors based on ReS 2 FETs.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/abd2a0