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Development of Nano-SnO2 and SnO2:V2O5 Thin Films for Selective Gas Sensor Devices
Pure and doped SnO 2 with V 2 O 5 nanopowders were synthesized via sol–gel method using different V 2 O 5 ratios. Novel thin films of SnO 2 :V 2 O 5 were thermally vacuum deposited from the nanopowders and utilized for gas sensor devices to detect volatile organic compounds hazardous gases. The morp...
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Published in: | Arabian journal for science and engineering (2011) 2021, Vol.46 (1), p.669-686 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | Pure and doped SnO
2
with V
2
O
5
nanopowders were synthesized via sol–gel method using different V
2
O
5
ratios. Novel thin films of SnO
2
:V
2
O
5
were thermally vacuum deposited from the nanopowders and utilized for gas sensor devices to detect volatile organic compounds hazardous gases. The morphological and crystalline structure, textural properties, functional groups, optical properties and thermal behavior were investigated by FESEM, XRD, HRTEM, surface area BET, FTIR and UV–Visible spectroscopy, respectively, for both the nanopowders, and thin films. From XRD patterns, the average calculated crystallite sizes decreased from 7.8 nm to 4.5 nm as the V
2
O
5
concentration was varied from 0 to 10%. FESEM and HRTEM show that all the synthesized nanomaterials composed of mesoporous networks of aggregated nanoparticles that almost spherical. Thus, V
2
O
5
doped SnO
2
nanopowders synthesized by sol–gel method exhibited the structural and textural features required to be used as an active area for gas sensor devices. The effect of various doping weight amounts (1, 5 and 10 wt%) of V
2
O
5
as the dopant element enhanced the gas response time and sensitivity. The electrical behavior of the sensors was determined by measuring the resistance of two deposited platinum electrodes for sensor’s devices for different kinds of gases (LPG, H
2
, NH
3
and acetone) at different temperatures. |
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ISSN: | 2193-567X 1319-8025 2191-4281 |
DOI: | 10.1007/s13369-020-04735-9 |