Reasons of Crystallite Formation during the Self-Catalyzed GaAs Nanowire Growth

During the self-catalyzed GaAs nanowire growth formation of parasitic GaAs crystallites is observed. The reasons for crystallite formation are explained on the base of Monte Carlo simulation results. During simultaneous deposition of gallium and arsenic on the GaAs(111)B substrate coated by a silico...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2020-12, Vol.54 (14), p.1850-1853
Main Authors: Nastovjak, A. G., Shwartz, N. L., Emelyanov, E. A., Petrushkov, M. O., Vasev, A. V., Putyato, M. A., Preobrazhenskii, V. V.
Format: Article
Language:English
Subjects:
Arsenic
Crystal structure
Crystallites
Crystals
Deposition
Droplets
Gallium arsenide
Magnetic Materials
Magnetism
Monte Carlo method
Monte Carlo simulation
Nanostructure Technology
Nanowires
Nucleation
Oxide coatings
Physics
Physics and Astronomy
Silicon oxides
Silicon substrates
Structure
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:During the self-catalyzed GaAs nanowire growth formation of parasitic GaAs crystallites is observed. The reasons for crystallite formation are explained on the base of Monte Carlo simulation results. During simultaneous deposition of gallium and arsenic on the GaAs(111)B substrate coated by a silicon oxide film, liquid gallium droplets nucleate on the oxide surface. After nucleation, droplets enlarge in size with time and etch the oxide layer. Formation of GaAs crystal structures becomes possible only after the Ga droplet contacts underlying crystal substrate. It is shown that excessively high arsenic and gallium deposition rates lead to the crystallite formation at the initial growth stage. The GaAs crystallites collect part of the deposited gallium and arsenic decreasing their surface concentration, thereby, adjusting the growth conditions for the nanowire growth. Therefore, during the self-catalyzed GaAs nanowire growth the self-regulation of growth conditions takes place.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782620140213