An Accurate Characterization Method for Integrated Polarization Converters

• Published in: IEEE journal of quantum electronics 2021-02, Vol.57 (1), p.1-6
• Main Authors: Reniers, Sander F. G., Williams, Kevin A., van der Tol, Jos J. G. M., Jiao, Yuqing
• Format: Article
• Language: English
• Subjects: 4-port method; accurate characterization method; Converters; Couplers; elemental semiconductors; Gratings; III-V semiconductor materials; III-V semiconductors; indium compounds; Indium phosphide; InP-membrane-on-silicon platform; InP-Si; Insertion loss; integrated optics; integrated polarization converters; Loss measurement; nanophotonics; optical fabrication; optical losses; optical polarisers; photonic crystals; Photonic integrated circuits; Polarization; polarization converter; polarization converters; silicon; Silicon nitride; simulated polarization conversion efficiency; size 4.0 micron
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/JQE.2020.3047119

We present a characterization method for polarization converters which improves the accuracy of traditional characterization methods significantly. An experimental demonstration of the method is presented on the InP-membrane-on-silicon (IMOS) platform. The design and fabrication of the polarization converter is discussed, as well as the simulated polarization conversion efficiency. A device of only 4 microns is shown to achieve 97.5%±0.5% polarization conversion, corresponding to an extinction ratio of -16± 0.9 dB. The traditional characterization method is compared to the new 4-port method, and the accuracy is improved from up to 20% to 0.5%.