Role of annealing temperature of nickel oxide (NiOx) as hole transport layer in work function alignment with perovskite

• Published in: Applied physics. A, Materials science & processing Materials science & processing, 2021-02, Vol.127 (2), Article 117
• Main Authors: Imran, Muhammad, Coskun, Hikmet, Khan, Nawazish A., Ouyang, Jianyong
• Format: Article
• Language: English
• Subjects: Annealing; Applied physics; Characterization and Evaluation of Materials; Charge efficiency; Charge transfer; Charge transport; Condensed Matter Physics; Devices; Electron transport; Glass substrates; Machines; Manufacturing; Materials science; Nanotechnology; Open circuit voltage; Optical and Electronic Materials; Performance enhancement; Perovskites; Photoelectron spectroscopy; Photoelectrons; Photoluminescence; Photovoltaic cells; Physics; Physics and Astronomy; Processes; Solar cells; Solar Energy Materials and Applications; Spectrum analysis; Surfaces and Interfaces; T.C. : Solar Energy Materials and Applications; Thin Films; Work functions
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-021-04283-5

Use of inorganic charge transport layer has demonstrated relatively stable perovskite solar cells (PSCs). NiO x is the most widely used inorganic hole transport layer in inverted PSCs and different techniques and doping in this layer have been reported to improve the performance of these devices. This manuscript describes the synthesis of NiO x thin film which act as hole transport layer on glass substrate at the initial stage and PSC devices were fabricated at the secondary stage. Effect of post deposition annealing temperature on the composition, tuning of the work function and aligning it with perovskite work function increase the hole transport efficiency and improve the open circuit voltage of devices from 0.96 to 1.08 V is reported. Ultraviolet photoelectron spectroscopy results were used to check the change in work function and X-ray photoelectron spectroscopy to probe the underlying reason for improvement of devices are also included. The charge transfer efficiency is checked by the results of time resolved photoluminescence spectra is also given. Devices with NiO x as hole transport layer and ZnSe as electron transport layer are also described and performance of devices is also included in this manuscript.