A High-Temperature Model for GaN-HEMT Transistors and its Application to Resistive Mixer Design

This article presents a high temperature model for gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC). The proposed model for the channel resistance Rds is based on an empirical nonlinear model. The model is applied to design a resistive mixer of a high temperatu...

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Bibliographic Details
Published in:IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2021-02, Vol.68 (2), p.581-591
Main Authors: Salem, Jebreel M., Pour, Fariborz Lohrabi, Sam Ha, Dong
Format: Article
Language:English
Subjects:
Bias
Electric potential
Gallium nitride
Gallium nitrides
GaN HEMT
HEMTs
High electron mobility transistors
High temperature
high temperature electronics
high temperature model
Integrated circuit modeling
Mixers
noise figure
reliability
resistive mixer
Semiconductor devices
Silicon carbide
Temperature measurement
Transistors
Voltage
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Summary:This article presents a high temperature model for gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC). The proposed model for the channel resistance Rds is based on an empirical nonlinear model. The model is applied to design a resistive mixer of a high temperature transceiver for downhole communications through a systematic approach and estimate the performance of the mixer. The proposed model matches well with measurement results of the mixer and accurately estimates its performance at temperatures up to 250 °C. The model is also applied to obtain the optimal gate bias voltage of the mixer for a given temperature. The optimal bias voltage scheme reduces the conversion loss of the mixer by a factor of 8.4 dB at 250 °C under the local oscillator power of -10 dBm.
ISSN:1549-8328
1558-0806
DOI:10.1109/TCSI.2020.3039907