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Intact 2D/3D halide junction perovskite solar cells via solid-phase in-plane growth
The solution process has been employed to obtain Ruddlesden–Popper two-dimensional/three-dimensional (2D/3D) halide perovskite bilayers in perovskite solar cells for improving the efficiency and chemical stability; however, the solution process has limitations in achieving thermal stability and desi...
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Published in: | Nature energy 2021-01, Vol.6 (1), p.63-71 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The solution process has been employed to obtain Ruddlesden–Popper two-dimensional/three-dimensional (2D/3D) halide perovskite bilayers in perovskite solar cells for improving the efficiency and chemical stability; however, the solution process has limitations in achieving thermal stability and designing a proper local electric field for efficient carrier collection due to the formation of a metastable quasi-2D perovskite. Here we grow a stable and highly crystalline 2D (C
4
H
9
NH
3
)
2
PbI
4
film on top of a 3D film using a solvent-free solid-phase in-plane growth, which could result in an intact 2D/3D heterojunction. An enhanced built-in potential is achieved at the 2D/3D heterojunction with a thick 2D film, resulting in high photovoltage in the device. The intact 2D/3D heterojunction endow the devices with an open-circuit voltage of 1.185 V and a certified steady-state efficiency of 24.35%. The encapsulated device retained 94% of its initial efficiency after 1,056 h under the damp heat test (85 °C/85% relative humidity) and 98% after 1,620 h under full-sun illumination.
Two-dimensional structures introduced into perovskite solar cells improve performance yet their morphological and dimensional control remains challenging. Jang et al. devise a solid-phase approach to grow phase-pure two-dimensional perovskites over bulk perovskite, which affords greater device efficiency and stability. |
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ISSN: | 2058-7546 2058-7546 |
DOI: | 10.1038/s41560-020-00749-7 |