Ferromagnetism, structure transitions, and strain coupling of magnetoelastic double perovskite La2CoMnO6

Double perovskite La 2 CoMnO 6 is an attractive spintronics with magnetoelectric, magnetodielectric, and magnetoresistive effects, which are related, at least in part, to combined structural and magnetic instabilities. To explore its magnetoelastic coupling behaviour, a conventional analysis of latt...

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Bibliographic Details
Published in:Journal of materials science 2019-04, Vol.54 (8), p.6027-6037
Main Authors: Yang, Dexin, Yang, Tao, Chen, Yulong, Liang, Yu, Liu, Yan’gai
Format: Article
Language:English
Subjects:
Anomalies
Antiferromagnetism
Antisite defects
Ceramics
Characterization and Evaluation of Materials
Chemistry and Materials Science
Classical Mechanics
Coupling
Crystal defects
Crystal structure
Crystallography and Scattering Methods
Electron spin
Ferromagnetism
Magnetoresistivity
Materials Science
Perovskites
Polymer Sciences
Solid Mechanics
Spintronics
Strain analysis
Thin films
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Summary:Double perovskite La 2 CoMnO 6 is an attractive spintronics with magnetoelectric, magnetodielectric, and magnetoresistive effects, which are related, at least in part, to combined structural and magnetic instabilities. To explore its magnetoelastic coupling behaviour, a conventional analysis of lattice parameter data in terms of spontaneous strain shows that the ferromagnetic ordering process is accompanied by significant volume ( e aM ) and shear ( e tM ) strains. The DC and AC magnetic data reveal the antisite defects with antiphase regions, and the ferromagnetic transition is at ~ 230 K with a small antiferromagnetic ordering at about 170 K. In addition, the Rietveld refinement of the in situ variation X-ray diffraction from 120 to 1400 K, scanning electron microscopy, and differential scanning calorimetry were used to confirm the crystal structure, microstructure, magnetic, and structural anomalies of the sample synthesised in pure oxygen atmosphere. This study, and in particular the strain analysis, of La 2 CoMnO 6 will facilitate its potential application in the field of spin electronics and thin-film engineering.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-018-03306-6